PRODUCTSGDDR5 SDRAM

H5GC8H24AJR

Features

• Single ended interface for data, address and command
• Quarter data-rate differential clock inputs CK/CK# for
ADD/CMD
• Two half data-rate differential clock inputs WCK/WCK#,
each associated with two data bytes (DQ, DBI#, EDC)
• Double Data Rate (DDR) data (WCK)
• Single Data Rate (SDR) command (CK)
• Double Data Rate (DDR) addressing (CK)
• 16 internal banks
• 4 bank groups for tCCDL = 3 tCK and 4 tCK
• 8n prefetch architecture: 128/256 bit per array read or
write access
• Burst length: 8 only
• Programmable CAS latency: 5 to 27 tCK
• Programmable WRITE latency: 1 to 7 tCK
• WRITE Data mask function via address bus (single/
double byte mask)
• Data bus inversion (DBI) & address bus inversion (ABI)
• Address training: address input monitoring by DQ pins
• WCK2CK clock training with phase information by EDC
pins
• Data read and write training via READ FIFO
• READ FIFO pattern preload by LDFF command
• Direct write data load to READ FIFO by WRTR command
• Consecutive read of READ FIFO by RDTR command
• Read/Write data transmission integrity secured by cyclic
redundancy check (CRC-8)
• READ/WRITE EDC on/off mode
• Programmable EDC hold pattern for CDR
• Programmable CRC READ latency = 0 to 3 tCK
• Programmable CRC WRITE latency = 7 to 14 tCK
• Low Power modes
• RDQS mode on EDC pin
• Optional on-chip temperature sensor with read-out
• Auto & self refresh modes
• Auto precharge option for each burst access
• 32ms, auto refresh (16k cycles)
• Temperature sensor controlled self refresh rate
• On-die termination (ODT); nominal values of 60 ohm
and 120 ohm
• Pseudo open drain (POD-15 or POD-135) compatible
outputs (40 ohm pulldown, 60 ohm pullup)
• ODT and output drive strength auto-calibration with
external resistor ZQ pin (120 ohm)
• Programmable termination and driver strength offsets
• Selectable external or internal VREF for data inputs;
programmable offsets for internal VREF
• Separate external VREF for address / command inputs
• Vendor ID, FIFO depth and Density info fields for
identification
• x32/x16 mode configuration set at power-up with EDC
pin
• Mirror function with MF pin
• Boundary scan function with SEN pin
• 1.35V / 1.5V +/- (3%xVDD)V supply for device
operation (VDD)
• 1.35V / 1.5V +/- (3%xVDDQ)V supply for I/O interface
(VDDQ)
• 170 ball BGA package

Speed

SpeedSpeed의 Part Number, Voltage, Speed를 나타낸 표 입니다.
Part Number Speed Voltage
R2 3.5GHz/4.0GHz 1.35V/1.5V
R0 3.0GHz/3.5GHz 1.35V/1.5V