PRODUCTSModule

HMABAGL7A4R4N

Features

• 288 pin Load Reduced DDR4 DRAM Dual In-LIne Memory Modules
• Buffer performance by LRDIMM presenting less load to system
• Compatible with RDIMM systems with appropriate BIOS change
• Power Supply: VDD=1.2V (1.14V to 1.26V)
• VDDQ = 1.2V (1.14V to 1.26V)
• VPP = 2.5V (2.375V to 2.75V)
• VDDSPD=2.25V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM/3DS SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-2666, PC4-2400
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.

Technical Data Sheet

Technical Data Sheet Technical Data Sheet의 Part Number, Rev., Update Date, Remark를 나타낸 표 입니다.
Part Number Rev. Update Date Remark
HMABAGL7A4R4N 1.0 2017-09-01  

Speed

SpeedSpeed의 Part Number, Speed를 나타낸 표 입니다.
Part Number Speed
UL 2400 20-18-18