History

These are the records of
SK hynix’s growth since 1983 until today

  • 1983

Current ~ 2018Technology Innovator for a Better World

2023

  • 11
    World's Fastest 'LPDDR5T' Mobile DRAM First Commercialization
  • 8
    Developed HBM3E with the world’s best specification
    Developed LPDDR5X DRAM with the world’s highest capacity
    Unveiled the sample of the world’s tallest NAND with 321 layers
  • 6
    Initiated the mass production of the world’s tallest 4D NAND with 238 layers
  • 4
    Developed the world’s first HBM3 with 12 layers
  • 1
    Developed the world's fastest mobile DRAM, LPDDR5T

2022

  • 9
    Decided to invest in M15X new plant
  • 8
    Completed the acquisition of key foundry
    Developed the world’s tallest NAND with 238 layers
  • 6
    Started the mass production of HBM3 DRAM
  • 3
    Kwak Noh-Jung appointed as the independent representation
    10th anniversary of incorporation to the SK Group
  • 2
    Development of next-generation intelligent memory semiconductor PIM
  • 1
    Launch of ICT alliance among three SK companies

2021

  • 12
    Closed the first deal of the acquisition of Intel NAND business
  • 10
    Developed the world’s first HBM3 DRAM
  • 7
    Full-scale mass production of 10nm-class 4th-gen DRAM using EUV
  • 5
    Announces 2020 Social Value (SV) Achievements
  • 3
    Starts Mass-production of LPDDR5 Mobile DRAM with Industry’s Largest Capacity
    Board Appoints Park Jung-ho as Co-CEO
  • 2
    Announces the Completion of M16 Plant Construction
  • 1
    Announces SV 2030, a roadmap for maximizing Social Values

2020

  • 12
    Completion developing the Industry's Most Multilayered 176-Layer 4D NAND Flash
  • 10
    Launches World's First DDR5 DRAM
    To Acquire Intel NAND Memory Business
  • 9
    Invests in AI Specialized Company 'Gauss Labs Inc.' to Lead SK's Future Value Creation
  • 7
    Starts Mass-Production of High-Speed DRAM, "HBM2E"
  • 4
    Wins the Grand Prize of Water Security 2019 Awarded by CDP

2019

  • 10
    Open Global Newsroom to Strengthen Communication
    Develops 1Znm 16Gb DDR4 DRAM
  • 8
    Develops World's Fastest High Bandwidth Memory, HBM2E
    Unveils "Gold S31" Consumer Solid-State Drive on Amazon
  • 7
    Launch of 'ECO Alliance' to establish eco-friendly semiconductor ecosystem
  • 6
    Starts Mass-Producing World's First 128-ayer 4D NAND
  • 5
    Shipped samples of 96-layer 1Tb QLC 4D NAND
  • 4
    Completed expanded fab (C2F) in Wuxi, China
  • 3
    Announced KRW 1.2 trillion support plans for mutual growth at the “Semiconductor Cluster”
    Demonstrated industry’s first ZNS-based SSD solution for next-gen data centers
  • 2
    A Special Purpose Company (SPC) submitted an Investment Letter of Intent for a “Semiconductor Cluster” to Yongin city government

2018

  • 12
    Broke ground for M16 at its headquarters in Icheon
    Appointed Dr. Lee Seok-Hee as the new Chief Executive Officer
  • 11
    Developed 1Ynm 16Gb DDR5 DRAM
    Developed 1Ynm 8Gb DDR4 DRAM
    Launched the world’s first ‘96-layer CTF-based 4D NAND Flash’
  • 10
    Introduced a new slogan “We Do Technology”
    Held a ceremony celebrating the completion of M15 in Cheongju
  • 7
    Announced a construction plan of a new semiconductor fabrication plant in Icheon
  • 6
    Completed procedure to take over Toshiba Memory through consortium between Korea, America and Japan
  • 5
    Completion of Happy More, ‘Subsidiary Standard Workplace for People with Disabilities’
  • 3
    Introduction of outside director system and establishment of continuous management commission within the board of directors
  • 2
    Development of 4th generation (72 phase) 3D NAND-based 4TByte SATA SSD for business use
    Started 4th generation (72 phase) NAND-based next generation PCIe eSSD customer certification

2023.08 Developed HBM3E with the world’s best specification

2023.08 Unveiled the sample of the world’s tallest NAND with 321 layers

2022.08 Developed the world’s tallest NAND with 238 layers

2022.03 10th anniversary of incorporation to the SK Group

2021.10 Developed the world’s first HBM3 DRAM

2021.02 Completion of M16 Plant Construction

2021.01 Launched Client-side SSD 'gold P31', 'Gold S31'

2021.01 Announces SV 2030,
a roadmap for maximizing Social Values

2020.10 Launches World's First DDR5 DRAM

2019.08 Develops World's Fastest High Bandwidth Memory, HBM2E

2019.06 Starts Mass-Producing World's
First 128-ayer 4D NAND

2018.10 Introduced a new slogan “We Do Technology”

2018.05 Completion of Happy More, ‘Subsidiary Standard Workplace for People
with Disabilities’

2017 ~ 2012 Putting on the wings of happiness

2017

  • 10
    Operated “SK hynix Industrial Health Advancement Continuation Committee”
  • 9
    Currented construction plan for the Icheon Campus Research and Development Center
    Investment decision for Toshiba Memory
  • 7
    Established ‘SK hynix System IC’, which is a subsidiary specializing in foundry
  • 4
    Introduced Industry’s Fastest 8Gb Graphics DRAM(GDDR6)
    Introduced Industry’s Highest 72-Layer 3D NAND Flash
  • 1
    Launched the World’s First Highest Density of 8GB LPDDR4X

2016

  • 12
    Announced Construction of a Cutting Edge NAND Flash FAB in Cheongju
  • 10
    Entered into an Agreement with Stanford University to R&D ‘Artificial Neural Network Devices’
    Joined the Nation's First 'Platinum Club' of CDP's the Best Honor
  • 8
    MOU for an Establishment of ‘Subsidiary Typed Standard Workplace’ with KEAD
  • 2
    Launched a Handball Team ‘SK Hawks’

2015

  • 8
    Established M14 Line in Icheon
    Expanded IP and Commercial Relationship with SanDisk
  • 6
    Introduced Industry's First Model of Wage Sharing with Biz. Partners
  • 2
    The World’s First Commercialization of 8Gb LPDDR4
  • 1
    Announced All-Time High Financial Results for FY2014

2014

  • 12
    Signed a MOU for Joint Development of Nano Imprint Lithography with Toshiba
  • 10
    Developed the World’s First 16GB NVDIMM
  • 9
    Established a back-end Line in Chongqing, Sichuan Province, China
    Listed on the DJSI World for 5 Consecutive Years
    Developed the World’s First Wide IO2 Mobile DRAM
  • 6
    Acquired Firmware Division of Softeq Development FLLC
  • 5
    Acquired PCIe Card Division of Violin Memory
  • 4
    Developed the World's First 128GB DDR4 Module

2013

  • 12
    Developed the World's First 20nm Class LPDDR4
    Developed the World's First TSV-based HBM
  • 11
    Established mass production system of 16nm NAND Flash
  • 10
    Developed the World’s First 20nm Class 6Gb LPDDR3
  • 8
    Opened an Integrated Analysis Center
  • 7
    Signed a Cross License Agreement with Samsung Electronics Co.
  • 6
    Signed a Patent License Agreement with Rambus
    Developed the World’s First High Density 8Gb LPDDR3
  • 2
    Appointed Dr. Park Sung-Wook as the new Chief Executive Officer

2012

  • 9
    Developed Low-Voltage 4Gb Graphics DDR3
    Launched the Flash Solution Design Center
  • 6
    Established M12 Line in Cheongju
    Launched Client-side SSD
    Acquired Link_A_Media Devices
    Acquired Ideaflash S.r.l. and Established a Flash R&D Center in Europe
    Signed Joint Development for PCRAM with IBM
  • 4
    Signed a Strategic Alliance with Spansion
  • 3
    Changed the Company name to 'SK hynix Inc.'
  • 2
    SK Telecom becomes Hynix’s largest shareholder
    Appointed Mr. Chey Tae-won as the new Chairman & Chief Executive Office
    Appointed Mr. Ha Sung-min as the Chairman of Board of Directors

2017.07 Established ‘SK hynix System IC’,
which is a subsidiary specializing in foundry

2013.10 2D Nano 4Gb DDR3 DRAM

2012.06 Established M12 in Cheongju

2011 ~ 2001 With the world’s best technology

2011

  • 11
    SK Telecom Signed the Share Purchase Agreement with the Hynix Share Management Council
  • 7
    Signed Joint Development for MRAM with Toshiba
  • 4
    Developed 30nm Class 2Gb high performance DDR4 DRAM
  • 3
    Developed 40nm Class 16Gb DDR3 DRAM using TSV technology

2010

  • 9
    Named to Dow Jones Sustainability World Index
    Signed a joint development agreement with HP on Next Generation Memory Products, ReRAM
  • 6
    Completed construction of a back-end joint venture, HITECH Semiconductor Package & Test, in China
  • 3
    Appointed Mr. Kwon Oh-chul as the new Chief Executive Officer
  • 2
    Developed 20nm Class 64Gb NAND Flash
  • 1
    Developed the World’s First 40nm Class 2Gb Mobile Low Power DDR2 DRAM

2009

  • 12
    Introduced the World's First 40nm Class 2Gb GDDR5 DRAM
  • 10
    Introduced the Second Generation 1Gb DDR3
  • 8
    Introduced 4Gb Mobile DDR SDRAM Supported on Intel’s Moorestown Platform
  • 4
    Developed the world’s first Low Power-High Speed Mobile 1Gb DDR2 DRAM
  • 3
    Announced the world’s first 8GB 2-Rank DDR3 R-DIMM validation
  • 2
    Developed the world’s first 44nm DDR3 DRAM
  • 1
    Acquired Intel validation for the world’s first ultra-high speed DDR3 based module for servers 4GB ECC UDIMM

2008

  • 12
    Developed the World’s First 2Gb Mobile DRAM
  • 11
    Introduced Industry's Fastest 7Gbps, 1Gb GDDR5 Graphics DRAM
  • 8
    Completed Construction of 300mm Fabrication Plant of 3rd Factory in Cheongju
    US decided to Lift Countervailing Duty Order on DRAM
    Demonstrated World’s First 16 GB 2-Rank R-DIMM Using MetaRAM™ Technology
  • 7
    Announced Closure of Eugene Fabrication Plant
  • 5
    Signed amendment to strengthen long-term strategic alliance with ProMOS
  • 4
    Released the 'Sustainability Report'
    Applauded the Council of the European Unions move to lift countervailing duties on Hynix DRAMs
    Developed the world's fastest Mobile LPDDR2
    Signed license and joint development agreement on Spin-Transfer Torque MRAM (STT-RAM) with Grandis
  • 3
    Announced new Board of Directors
    Contracted with Fidelix for strategic alliance
  • 2
    Introduced 2-Rank 8GB DDR2 RDIMM
    Announced strengthening R&D sector
  • 1
    Signed an agreement for cooperating joint R&D program of next-generation non-volatile memory technology
    Arranged Toyota benchmarking program in order to establish innovative system
    Announced 800MHz, 1GB/2GB UDIMM Validation
    Held a strategic management workshop for sustainability management

2007

  • 12
    Successfully offer global convertible notes
    Opened a New Webpage
  • 11
    WTO upholded ruling against Japan over punitive tariffs on imports of Hynix chips
    Signed on CIS business cooperation with SiliconFile
    Introduced 'New Working Board System'
    Acquired Intel validation for 1Gb DDR2 DRAM
    Developed industry's first 1Gb GDDR5 DRAM
  • 10
    Signed an agreement for cooperating environmental management with Korean Federation For Environmental Movement
    Signed technology and licensing agreement for PRAM with Ovonyx
  • 9
    Hynix-ST Semiconductor Ltd. Signed to Sell 200mm Equipment to CRH
    Developed the world's first NAND Flash MCP with 24 stacked chips
  • 8
    Reached license agreement with ISi on Z-RAM memory technology
    Developed industry's fastest, smallest 1Gb Mobile DRAM
  • 7
    Announced corporate slogan 'Good Memory'
    Announced corporate mid-long term master plan
  • 5
    Developed the industry’s first NAND Flash 24 stacks multi chip package
    Acquired the industry's first validation on DDR3 DRAMs from Intel
  • 4
    Achieved the top-level operating profit margin
    Launched mass production of DOC H3
  • 3
    Appointed Mr. Kim Jong-kap as the new Chairman & CEO
    Reached patent cross license agreement and signed MOU to form joint venture for x4 technology with SanDisk
    Signed semiconductor patent cross licensing and supply agreements with Toshiba
    Announced 'ECO Mark'
    Developed the world's fastest ECC Mobile DRAM
    Announced new Board of Directors
  • 1
    Posted record revenue and profit for 2006
    Developed the fastest memory module based on 'Wafer Level Package' technology

2006

  • 12
    Announced industry's first 60nm 1Gb DDR2 800MHz based modules
    Developed the world's fastest 200MHz 512Mb mobile DRAM
  • 10
    Posted record high revenues since foundation
    Established a global manufacturing network with complete construction of Hynix-ST Semiconductor Inc
  • 9
    Launched 300mm research fab line
  • 3
    Acquired the industry's first validation on 80nm 512Mb DDR2 DRAMs from Intel
  • 1
    Announced joint development plan of DOC H3 (new generation
    DiskOnChip embedded flash drive) with M-Systems

2005

  • 12
    Developed the world's first 512Mb GDDR4, the industry's fastest and highest density graphics DRAM
  • 11
    Launched the industry's first JEDEC standard 8GB DDR2 R-DIMM
  • 7
    Received industry's first Intel validation on high density-high speed 2GB DDR2-667 SODIMMs
    Emerged from Corporate Restructuring Promotion Act ahead of schedule
  • 6
    Developed industry's first ultra-high-speed DDR2-800 memory module and received validation from Taiwan-based ASUS
  • 5
    Began mass production of chips from 12-inch plant, M10
  • 4
    Launched Hynix-ST joint venture construction in Wuxi City, Jiangsu Province, China
  • 3
    Posted record high operating profit for year 2004 as a whole
  • 1
    Developed x8-based memory modules for servers with 30 pct higher power efficiency
    Signed strategic alliance contract with Taiwan's ProMOS Technologies

2004

  • 11
    Signed contract with STMicroelectronics for setting up plant in China
  • 10
    Completed sale of non-memory business
  • 8
    Signed contract with Wuxi City government for setting up plant in China
  • 6
    Signed non-memory Business Transfer Agreement with System Semiconductor
  • 3
    Acquired DDR2 SDRAM validation From Intel
  • 2
    Developed 512Mb NAND flash memory

2003

  • 12
    Acquired 512Mb DDR2 SDRAM validation from Intel
  • 9
    Received fourth consecutive year Partners in Performance award from Selestica
  • 8
    Developed 0.18-micron high voltage process technology
    Developed 1Gb DDR2 RAM
  • 7
    Produced ultra-speed 256Mb DDR500
  • 6
    Acquired 512Mb DDR400 validation from Intel
    Produced organic EL driver capable of lighting in 4,096 colors
    Established research lab for environment, safety and technology
  • 5
    Started mass production of ultra-low power 256Mb SDRAM for mobile phone use
    Succeeded in mass production of 0.10-micron "Golden Chip"
  • 4
    Strategically cooperated with STMicroelectronics in flash memory development
  • 3
    Developed commercialization technology of Fe RAM
    Produced CMOS high-frequency PLL IC chip
  • 2
    Acquired 256Mb DDR 400 validation from Intel
  • 1
    Acquired 333Mbps ultra-speed 512Mb DDR SDRAM validation from Intel

2002

  • 11
    Spun off HYDIS (TFT-LCD)
  • 9
    Signed MOU to spin off Hydis
  • 8
    Developed the world's first high-density, wide-bandwidth 256MB DDR SDRAM
    Opened local website for memory module sale
  • 7
    Developed bluetooth 'Embedded Flash Base-Band Chip'
  • 6
    Developed the world's first 256MB SDR SDRAM for high-end consumer application
  • 5
    Signed long-term agreement for foundry supply with Cirrus
  • 3
    Developed 1Gb DDR DRAM module
  • 2
    Acquired validation for DDR SDRAM from VIA
  • 1
    Signed agreement to transfer stake in "Hyundai Syscomm"

2001

  • 12
    Developed the world's fastest 128Mb DDR SDRAM
  • 10
    Developed 8bit MCUs for car audio use and started mass production
  • 9
    Sold TFT-LCD assets for $650m
  • 8
    Completed separation from Hyundai Group
  • 7
    Spun off CDMA Mobile Communication Equipment Manufacture Unit to 'Hyundai Syscomm'
    Launched mass production of MCU for flash memory cards
  • 6
    Spun off Hynix's Management Supporting Unit to "ASTEC"
    Entered "Multi Chip Package" market
    Developed two types of 32Mb super-low power flash memory
  • 5
    Spun off Network Business Unit to 'Hyundai Networks'
    Completed official spin-off of ADSL operation
    Developed 1Mb FeRAM
    Completed official spin-off of handset operation to “Hyundai CuriTel”
  • 4
    Started mass production of the world's fastest DDR SDRAM for graphics
    Introduced new CI
    Acquired 288Mb RDRAM validation from Rambus
  • 3
    Started to supply DDR SDRAM module for main memory to Compaq Computer Corporation
    Changed the Company name to 'Hynix Semiconductor Inc.'
    Developed 8Mb super-low power SRAM
    Spun off Customer Service Operation to 'Hyundai Digitech Service'
  • 2
    Sold Hyundai Electronics basketball team to KCC
    Spun off Satellite Service Unit
    Acquired validation from AMD and VIA for 128Mb and 256MB DDR SDRAM
    Signed contract with Hewlett-Packard for exclusive memory module supply
  • 1
    Received certificate on health and safety category from British Standards Institution
    Developed Korea's first Pb-free semiconductor

2011.04 Developed 30nm Class 2Gb high performance
DDR4 DRAM

2010.06 Completed construction of HITECH Semiconductor Package & Test, in China

2009.02 Developed the world’s first
44nm DDR3 DRAM

2008.08 Established M12 Line in Cheongju

2005.04 Started construction of a joint factory completed in 2004
with Wuxi, China

2005.05 M10 FAB completed in July 2004,
300mm equipment carry-in ceremony

2004.02 Developed 512Mb NAND flash memory

2001.04 Developed the world's fastest
128Mb DDR SDRAM

2001.03 Changed the Company name to
'Hynix Semiconductor Inc.'

2000 ~ 1990 Focused as a semiconductor company

2000

  • 12
    Acquired Telecommunications Leadership 9000 certification
    Developed 256MB micro-semiconductor module
  • 10
    Launched collaborative product & process innovation system
    Entered India's CDMA WLL equipment market
    Proclaimed new slogan as "Human & Digital“
  • 9
    Adopted corporate research commissioner system
  • 8
    Developed new 15.0/18.1 inch TFT-LCD module
    Launched satellite communications service for Asia-Pacific region
    Spun off Monitor Business Unit to "Hyundai Imagequest"
    Spun off PDP Business Unit
  • 7
    Strategically cooperated with LG Electronics in semiconductor business
    Received validation for electric money in China
    Initiated global cash management system with Bank of America
  • 6
    Begun mass production of world-class 18.1-Inch TFT LCD monitor
    Launched new photoresist for semiconductors
    Entered Brazilian WLL terminal market
  • 5
    Acquired ISO 14001 from LRQA for environment-friendly management in all business units
    Exported ADSL system firstly in Korea
  • 4
    Sold Scotland's semiconductor factory to Motorola
    Succeeded in developing new Ferrolectric RAM, FeRAM
    Started production of ultra-low voltage flash memory
    Started mass production of MCU for recharging battery
    MPEG-4/7 technology was selected as international standard
  • 2
    Received CMTL award from Intel at 'Intel Developer Conference'

1999

  • 12
    Agreed on long-term supply contract of CDMA equipment with Airtouch
    Implemented stock option system firstly among big Korean manufacturers
  • 11
    19 inch monitor was selected as best monitor by German PC magazine
  • 10
    Developed the world's first new memory manufacturing process technology
    Merged Hyundai Semiconductor Co,. Ltd.
  • 7
    Took over large stockholder's share of LG Semiconductor
  • 6
    Started mass production of the world's fastest 16M synchronous DRAM for graphics
  • 5
    Agreed on stock transfer contract with LG Group and LG Semiconductor
  • 3
    Sold semiconductor assembly company (ChipPAC)
  • 2
    Produced Korea's first MP3 decoder chip

1998

  • 12
    Succeeded in mass production of photosensitive material for 4G DRAM firstly in Korea and exported technology
    Developed 0.25㎛ non-memory manufacturing technology
  • 11
    Started mass production of the world's fastest 128M SDRAM
  • 10
    Developed 4th generation 64M synchronous DRAM
  • 9
    Developed 64M DDR synchronous DRAM
    Developed the world's smallest direct RAMBUS DRAM
    Developed next generation memory, FeRam
  • 8
    MAXTOR (HDD manufacture and supply) IPO on NASDAQ
  • 4
    Marketed PCS with 'Voice Recognition' technology
  • 3
    MPEG-4 core technology was selected as international standard
  • 2
    Developed Korea's first non-memory semiconductor for automobile
    Self-developed Korea's first 26 inch PDP

1997

  • 12
    Established 5 million-piece monthly production system of 64M DRAM chip
    Developed Korea's first digital HDTV broadcasting system
  • 11
    Developed the world's first Synclink DRAM test product
  • 5
    Developed the world's first 1G synchronous DRAM using SOI technology

1996

  • 12
    Started IPO
  • 10
    Established semiconductor fab in Scotland, UK
  • 9
    Participated in Taiwan's satellite communication service business
  • 8
    Participated in India's satellite communication service business
  • 2
    Started construction of semiconductor plant in Oregon, USA (HSA)
  • 1
    Took over MAXTOR (HDD manufacture and supply)

1995

  • 12
    Entered best ten manufacturers in Korea
  • 10
    Developed the world's first 256M SRAM
  • 8
    Established semiconductor plant in Oregon, USA (HSA)
  • 4
    Developed the world's first MPEG-2 SAVI decoder chip
  • 2
    Established non-memory US corporation, SYMBIOS

1994

  • 5
    Established China corporation, HECS
  • 4
    Established US corporation, AXIL
  • 3
    Participated in GLOBALSTAR (artificial satellite business)

1993

  • 12
    Exceeded ten-million-set target line in car audio production
  • 10
    Signed technology agreement with FUJITSU
    Exceeded 4 million-set target line in shipment of monitor
    Acquired ISO 9002 on telecommunications category
    Acquired ISO 9001 on car audio category firstly in Korea
  • 9
    Acquired ISO 9001 on semiconductor category
  • 8
    Developed CD-VISION 2000
    Developed car CD auto changer
    Acquired ISO 9002 on computer category
    Took over Maxtor (US HDD manufacturer)
    Developed 1M Fast SRAM
  • 7
    Acquired ISO 9002 on monitor & terminal category
    Started pilot production of 16M DRAM in FAB IV
  • 6
    Developed 8M MASK ROM
    Completed construction of FAB IV
    Developed HA, unmanned security system
    Took over Gold Star's camera assembly line
  • 3
    Acquired ISO 9002 on hybrid IC & memory module category
    Opened new Media Operation Division
  • 2
    Developed GPS, automotive navigation apparatus for car thirdly in the world
  • 1
    Succeeded in developing and localizing Car CDP DECK
    Developed IC card for memory extension
    Developed 3 inch STN LCD

1992

  • 12
    Completed construction of FAB 2 B-Line
  • 11
    Was selected as the most excellent company by US Analog Devices-PMI in semiconductor assembly part
  • 9
    Developed 64M DRAM
    Developed 64M DRAM sample product as government assignment
    Acquired ISO 9002 in semiconductor assembly category
    Developed 2nd generation 16M DRAM
  • 7
    Developed DSP built-in car audio firstly in Korea
  • 6
    Operated Automotive Electronics Division, IN-line System
  • 5
    Developed private switchboard HNT-832
  • 3
    Developed G4 FAX
  • 1
    Kim Joo-yong assumed office as CEO & President

1991

  • 11
    Developed 1M Slow SRAM
  • 10
    Domestically marketed the smallest and lightest mobile phone
  • 8
    Established Singapore corporation (HES)
    Domestically marketed 486 PC
  • 7
    Exceeded 1 hundred-million-piece target line in monthly semiconductor assembly capacity
  • 5
    Selected new CI for Hyundai Electronics
  • 4
    Started mass production of 4M DRAM
  • 3
    Developed 16M DRAM
  • 2
    Developed 16M DRAM pilot product as government assignment

1990

  • 11
    Exceeded 5 million-set target line in production of car audio
  • 9
    Started camera export to US
  • 7
    Held National S/W Competition for university students
  • 4
    Developed 1,200 bps PAGER firstly in Korea
  • 2
    Established HEA Semiconductor and Computer R&D Center
  • 1
    Started production of 1M DRAM
Merger and acquisition of LG Semiconductor

1999.07 Merger and acquisition of LG Semiconductor

1999.05 Developed the world's first
1G synchronous DRAM using
SOI technology

1992.09 64M DRAM developed by Hyundai Electronics

1990 Hyundai Electronics

1990 R&D site

1990 Selected as one of the top 100 quality management

1989 ~ 1983 The first steps of business

1989

  • 11
    Completed construction of FAB III Started production of VGA color monitor
  • 10
    Exported PC to Japan firstly in Korea
  • 9
    Exceeded 1 million-set target line in production of ARTPHONE and self-developed 4M DRAM
  • 8
    Developed 256K Fast SRAM
  • 7
    Produced 1 million sets of monitor
  • 5
    Formed Hyundai Electronics basketball team
  • 4
    Acquired top grade in Quality Control(Q.C) of car audio
    Launched joint development of 16M DRAM
  • 1
    Ranked 20th in the world semiconductor market

1988

  • 12
    Developed automatic answering phone
  • 11
    Established Europe corporation, HEE
  • 10
    Exceeded 2 million-set target line in car audio production
    Completed semiconductor assembly SMD line
  • 7
    Exceeded 7 million-piece mark in monthly sales
  • 6
    Developed 256K Slow SRAM
    Exceeded 500 thousand-set target line in export of monitor
    Agreed on technical cooperation in ASIC with LSI Logics Co. in US
  • 4
    Topped in export of PC in Korea
  • 1
    Completed development of 1M DRAM

1987

  • 12
    Car phone HKP-308 was selected as "Governmental Form Recognition No.1"
    Started 3.5" FDD production
  • 10
    Exceeded hundred- thousand-piece target line in export of car phone
    Started export of 256K DRAM
    Exceeded million-piece target line in export of car audio
  • 9
    Developed 4th generation switchboard HX-400
  • 8
    Agreed on contract for 256K DRAM foundry supply with US-based TI
  • 7
    Agreed on technical cooperation in 256K SRAM with MOS Electronic Co.
  • 4
    Entered FA market
    Launched satellite broadcasting receiver
  • 2
    Topped in key phone sales
  • 1
    Agreed on OEM supply contract with AIWA in production of car audio

1986

  • 11
    Exceeded thousand-piece target line in production of "Hyundai Art phone"
  • 10
    Completed construction of FAB 1B- LINE
  • 9
    Developed 4M DRAM in joint with the government
  • 8
    Developed CMOS type 256K EPROM
  • 7
    Started OEM production of key phone
    Developed private switchboard, PABXHX50
  • 6
    Held first employees' culture fair, "Ami Carnival"
  • 5
    Started production and export of car audio CX-135E to Canada firstly in Korea
  • 4
    Opened Semiconductor Sales head office
    Established Semiconductor Research Institute
  • 3
    Started production and sale of "ARTPHONE"
  • 1
    Opened Software Division head office

1985

  • 12
    Started shipment of 16K SRAM
  • 10
    Started mass production system of 256K DRAM
  • 9
    Started mass production of 400MHz key phone
  • 7
    Completed construction of semiconductor assembly plant
  • 5
    Marketed general phones in Korea
    Started mass production of 16K SRAM
    Started mass production of 64K DRAM
  • 4
    Completed construction of car audio plant
  • 3
    Agreed on production and supply contract of semiconductor foundry with US-based TI
    Started pilot production of semiconductor

1984

  • 12
    Succeeded in pilot production of 16K SRAM firstly in Korea
  • 10
    Opened US corporation, HEA
  • 9
    Completed construction of FAB II-A
  • 8
    Began construction of semiconductor assembly plant
  • 4
    Completed construction of communication equipment plant
    Completed construction of information equipment plant
  • 2
    Chung Mong-hun assumed office as CEO & President

1983

  • 11
    Started the first manufacturing of "Multifunctional Phone LX-2" as complete product
  • 10
    Began construction of Icheon plant
  • 5
    Agreed on contract of establishing PC sales agency with US-based IBM
  • 3
    Established US corporation (HEA)
  • 2
    Established Hyundai Electronics Co., Ltd

1986.10 Completion of Hyundai Electronics

1985.10 256K DRAM mass-produced by
Hyundai Electronics for the first time
in Korea

1984.12 Developed the first 16Kb S-RAM in Korea

1983.02 A bird's eye view of the Icheon plant
at the time of the founding of
Hyundai Electronics Industry

1983 Hyundai Electronics

1980 Semiconductor factory under construction