DDR3 SDRAM

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H5PS5162GFR

Features

  • VDD ,VDDQ =1.8 +/- 0.1V
  • All inputs and outputs are compatible with SSTL_18 interface
  • Fully differential clock inputs (CK, /CK) operation
  • Double data rate interface
  • Source synchronous-data transaction aligned to bidirectional data strobe (DQS, /DQS)
  • Differential Data Strobe (DQS, /DQS)
  • Data outputs on DQS, /DQS edges when read (edged DQ)
  • Data inputs on DQS centers when write(centered DQ)
  • On chip DLL align DQ, DQS and /DQS transition with CK transition
  • DM mask write data-in at the both rising and falling edges of the data strobe
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
  • Programmable CAS latency 2, 3, 4, 5, 6 and 7 supported
  • Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
  • Programmable burst length 4 / 8 with both nibble sequential and interleave mode
  • Internal four bank operations with single pulsed RAS
  • Auto refresh and self refresh supported
  • tRAS lockout supported
  • 8K refresh cycles /64ms
  • JEDEC standard 84ball FBGA(x16) : 7.5mm x 12.5mm
  • Full strength driver option controlled by EMRS
  • On Die Termination supported
  • Off Chip Driver Impedance Adjustment supported
  • Self-Refresh High Temperature Entry
  • Partial Array Self Refresh support

Technical Data Sheet

Technical Data Sheet
Part Number Rev. Update Date Remark
H5PS5162GFR 1.9 2014-03-18  

Simulation Model

Simulation Model
Part Number Rev. Update Date Remark
IBIS 1.11 2011-03-24  H5PS5162FGR
IBIS 1.1 2011-03-03  H5PS5162FGR-xI
Verilog 1.0 2010-11-17  
HSpice 1.0 2010-11-17  

Ordering Information


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